• DocumentCode
    2502152
  • Title

    Optoelectronic Properties Of GaN, AlGaN And AlGaN-GaN Quantum Well Heterostructures

  • Author

    Kolbas, R.M. ; Krishnankutty, S.

  • Author_Institution
    North Carolina State University
  • fYear
    1993
  • fDate
    19-21 July 1993
  • Keywords
    Aluminum gallium nitride; Doping; Epitaxial layers; Gallium nitride; Optical films; Photoluminescence; Photonic band gap; Substrates; Temperature; Zinc;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Optical Microwave Interactions/Visible Semiconductor Lasers/Impact of Fiber Nonlinearities on Lightwave Systems/Hybrid Optoelectronic Integration and Packaging/Gigabit Networks., LEOS 1993 Summer Topi
  • Conference_Location
    Santa Barbara, CA, USA
  • Print_ISBN
    0-7803-1284-8
  • Type

    conf

  • DOI
    10.1109/LEOSST.1993.696828
  • Filename
    696828
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2502152