Title :
A bond-pad structure for reducing effects of substrate resistance on LNA performance in a silicon bipolar technology
Author :
Colvin, John T. ; Bhatia, Saket S. ; O, Kenneth K.
Author_Institution :
Dept. of Electr. & Comput. Eng., Florida Univ., Gainesville, FL, USA
Abstract :
At high frequencies, substrate effects significantly degrade gain and noise figure of LNAs. A new bond-pad structure presented here significantly reduces substrate effects in a 4.4 GHz LNA resulting in a 10 dB increase in gain and a better than 2 dB improvement in noise figure. The inter-pad isolation of the new bond-pad structure is as much as 30 dB better than that of the conventional bond-pads
Keywords :
MMIC amplifiers; bipolar MMIC; bipolar analogue integrated circuits; electric resistance; elemental semiconductors; integrated circuit layout; integrated circuit metallisation; integrated circuit noise; silicon; substrates; 4.4 GHz; LNA performance; Si; Si bipolar technology; bond-pad structure; gain; inter-pad isolation; low-noise amplifier; noise figure; substrate effects; substrate resistance; Bismuth; Bonding; Capacitance; Circuit simulation; Circuit testing; Coupling circuits; Electrical resistance measurement; Frequency; Noise figure; Silicon;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 1998. Proceedings of the 1998
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-4497-9
DOI :
10.1109/BIPOL.1998.741892
