A bond-pad structure for reducing effects of substrate resistance on LNA performance in a silicon bipolar technology

Author

Colvin, John T. ; Bhatia, Saket S. ; O, Kenneth K.

Author_Institution

Dept. of Electr. & Comput. Eng., Florida Univ., Gainesville, FL, USA

fYear

1998

fDate

27-29 Sep 1998

Firstpage

109

Lastpage

112

Abstract

At high frequencies, substrate effects significantly degrade gain and noise figure of LNAs. A new bond-pad structure presented here significantly reduces substrate effects in a 4.4 GHz LNA resulting in a 10 dB increase in gain and a better than 2 dB improvement in noise figure. The inter-pad isolation of the new bond-pad structure is as much as 30 dB better than that of the conventional bond-pads

Keywords

MMIC amplifiers; bipolar MMIC; bipolar analogue integrated circuits; electric resistance; elemental semiconductors; integrated circuit layout; integrated circuit metallisation; integrated circuit noise; silicon; substrates; 4.4 GHz; LNA performance; Si; Si bipolar technology; bond-pad structure; gain; inter-pad isolation; low-noise amplifier; noise figure; substrate effects; substrate resistance; Bismuth; Bonding; Capacitance; Circuit simulation; Circuit testing; Coupling circuits; Electrical resistance measurement; Frequency; Noise figure; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting, 1998. Proceedings of the 1998

Conference_Location

Minneapolis, MN

ISSN

1088-9299

Print_ISBN

0-7803-4497-9

Type

conf

DOI

10.1109/BIPOL.1998.741892

Filename

741892