Title :
Silicon bipolar 3 V power amplifier for GSM900/GSM1800 handsets
Author :
Parkhurst, Ray ; Weber, Dave ; Jansen, Bart ; Fang, Wingra ; Hendin, Neil ; Kolk, Jaan ; Repeta, Morris
Author_Institution :
Wireless Semicond. Div., Hewlett-Packard Co., Newark, CA, USA
Abstract :
A hybrid dual band Power Amplifier Module (PAM) for GSM900/GSM1800 mobile phones is described. The PAM utilizes Nortel´s double-poly self-aligned silicon NPN transistors and HP´s RF MultiPak packaging technology. The PAM operates directly from the mobile phone battery over the 2.7 V to 4.5 V range
Keywords :
UHF integrated circuits; UHF power amplifiers; bipolar analogue integrated circuits; cellular radio; elemental semiconductors; hybrid integrated circuits; modules; packaging; printed circuits; silicon; telephone sets; transceivers; 1800 GHz; 2.7 to 4.5 V; 3 V; 900 MHz; GSM mobile phones; GSM900/1800 handsets; HP RF MultiPak packaging technology; Nortel; Si; Si bipolar power amplifier; Si n-p-n transistors; double-poly self-aligned NPN transistors; dual band power amplifier module; four-layer PCB; hybrid design; mobile phone battery operation; Batteries; Dual band; Mobile handsets; Packaging; Power amplifiers; Radio frequency; Semiconductor optical amplifiers; Silicon; Switches; Telephone sets;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 1998. Proceedings of the 1998
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-4497-9
DOI :
10.1109/BIPOL.1998.741894
