DocumentCode
2502329
Title
A 0.35 μm BiCMOS technology with 50 GHz Fmax selective epitaxial base transistors for RF applications
Author
Decoutere, S. ; Kuhn, R. ; Vleugels, F. ; Vancuyck, G. ; Caymax, M. ; Mohadjeri, B. ; Deferm, L.
Author_Institution
IMEC, Leuven, Belgium
fYear
1998
fDate
27-29 Sep 1998
Firstpage
124
Lastpage
127
Abstract
A 0.35 μm BiCMOS technology with double poly inside spacer n-p-n transistors reaching 50 GHz Fmax and 30 V Early voltage using selective epitaxial base technology, is described. The n-p-n transistors are integrated in an analog 0.35 μm CMOS process with poly resistors, double poly capacitors and on chip spiral inductors in the list of supporting devices
Keywords
BiCMOS integrated circuits; UHF integrated circuits; integrated circuit technology; vapour phase epitaxial growth; 0.35 micron; 30 V; 50 GHz; BiCMOS technology; RF applications; Si; analog CMOS process; double poly capacitors; double poly inside spacer n-p-n transistors; onchip spiral inductors; poly resistors; selective epitaxial base transistors; BiCMOS integrated circuits; CMOS process; CMOS technology; Capacitors; Inductors; Resistors; Space technology; Spirals; Transistors; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Bipolar/BiCMOS Circuits and Technology Meeting, 1998. Proceedings of the 1998
Conference_Location
Minneapolis, MN
ISSN
1088-9299
Print_ISBN
0-7803-4497-9
Type
conf
DOI
10.1109/BIPOL.1998.741897
Filename
741897
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