Title :
A 0.35 μm BiCMOS technology with 50 GHz Fmax selective epitaxial base transistors for RF applications
Author :
Decoutere, S. ; Kuhn, R. ; Vleugels, F. ; Vancuyck, G. ; Caymax, M. ; Mohadjeri, B. ; Deferm, L.
Author_Institution :
IMEC, Leuven, Belgium
Abstract :
A 0.35 μm BiCMOS technology with double poly inside spacer n-p-n transistors reaching 50 GHz Fmax and 30 V Early voltage using selective epitaxial base technology, is described. The n-p-n transistors are integrated in an analog 0.35 μm CMOS process with poly resistors, double poly capacitors and on chip spiral inductors in the list of supporting devices
Keywords :
BiCMOS integrated circuits; UHF integrated circuits; integrated circuit technology; vapour phase epitaxial growth; 0.35 micron; 30 V; 50 GHz; BiCMOS technology; RF applications; Si; analog CMOS process; double poly capacitors; double poly inside spacer n-p-n transistors; onchip spiral inductors; poly resistors; selective epitaxial base transistors; BiCMOS integrated circuits; CMOS process; CMOS technology; Capacitors; Inductors; Resistors; Space technology; Spirals; Transistors; Voltage;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 1998. Proceedings of the 1998
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-4497-9
DOI :
10.1109/BIPOL.1998.741897
