• DocumentCode
    2502330
  • Title

    Optimum Segmentation and Thickness of Silicon Pixel Detectors for Signal to Noise Ratio and Timing Resolution

  • Author

    Anelli, Giovanni ; Geronimo, Gianluigi De ; Connor, Paul O. ; Piemonte, Claudio

  • Author_Institution
    Dept. of Phys., Eur. Organ. for Nucl. Res., Geneva
  • Volume
    2
  • fYear
    2006
  • fDate
    Oct. 29 2006-Nov. 1 2006
  • Firstpage
    671
  • Lastpage
    680
  • Abstract
    In Silicon Pixel Detector systems the pixel size and detector thickness are often determined by spatial resolution and material budget requirements. Nevertheless, in some applications there is, within certain limits, freedom in the choice of these parameters. It is therefore interesting to understand what are the optimum pixel size and detector thickness which maximize Signal to Noise Ratio (SNR) and/or Timing Resolution (TR). To be accurate this optimization problem has to take into account detector parameters such as specific leakage current, operating temperature and specific capacitances and technology parameters such as noise characteristics, oxide thickness, power supply voltage and many others. To help understanding what the optimum detector segmentation and thickness are, we wrote an optimization routine which considers all the above mentioned parameters and which optimizes the size of the input transistor of the charge amplifier for each detector segmentation or thickness considered. SNR and TR require different optimization procedures. In particular, for TR it is important to consider the detector speed, and this requires proper modeling through 3D detector simulations.
  • Keywords
    CMOS analogue integrated circuits; circuit optimisation; image segmentation; semiconductor counters; timing; leakage current; noise characteristics; operating temperature; optimum detector segmentation; optimum segmentation; oxide thickness; pixel size; power supply voltage; signal to noise ratio; silicon pixel detector thickness; specific capacitance; timing resolution; Capacitance; Detectors; Leak detection; Leakage current; Signal resolution; Signal to noise ratio; Silicon; Spatial resolution; Temperature; Timing; CMOS analog integrated circuits; Circuit optimization; Silicon radiation detectors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nuclear Science Symposium Conference Record, 2006. IEEE
  • Conference_Location
    San Diego, CA
  • ISSN
    1095-7863
  • Print_ISBN
    1-4244-0560-2
  • Electronic_ISBN
    1095-7863
  • Type

    conf

  • DOI
    10.1109/NSSMIC.2006.355947
  • Filename
    4179101