A 50-GHz 0.25-μm implanted-base high-energy implanted-collector complementary modular BiCMOS (HEICBiC) technology for low-power wireless communication VLSIs

Author

Chyan, Yih-Feng ; Carroll, Michael S. ; Ivanov, Tony G. ; Chen, Alan S. ; Nagy, William J. ; Chaudhry, Samir ; Dail, Robert W. ; Archer, Vance D. ; Ng, K.K. ; Martin, Samuel ; Oh, Minseok ; Frei, Michel R. ; Kizilyalli, Isik C. ; Huang, Robert Y. ; Thoma,

Author_Institution

Lucent Technol., Bell Lab., Orlando, FL, USA

fYear

1998

fDate

27-29 Sep 1998

Firstpage

128

Lastpage

131

Abstract

A 0.25-μm modular high-energy implanted complementary BiCMOS (HEICBiC) technology has been developed for wireless-communication VLSIs. The technology demonstrates a high f_T=52 GHz and a high f_TBV_CEO=160 GHz-V for single-poly emitter NPN transistors and a high f_T=10.7 GHz for implanted-emitter PNP transistors. It is one of the best results for single-poly BiCMOS/bipolar technologies without an epitaxial buried collector. In comparison with 0.25-μm NMOS, HEICBiC shows lower power consumption and higher RF performance

Keywords

BiCMOS integrated circuits; MMIC; UHF integrated circuits; VLSI; ion implantation; low-power electronics; 0.25 micron; 10.7 to 160 GHz; RF performance; SHF; UHF; complementary modular BiCMOS technology; high-energy implanted-collector; implanted-base; implanted-emitter PNP transistors; low-power wireless communication VLSIs; power consumption; single-poly emitter NPN transistors; BiCMOS integrated circuits; CMOS process; CMOS technology; Implants; Integrated circuit technology; Ion implantation; MOS devices; Radio frequency; Signal processing; Very large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting, 1998. Proceedings of the 1998

Conference_Location

Minneapolis, MN

ISSN

1088-9299

Print_ISBN

0-7803-4497-9

Type

conf

DOI

10.1109/BIPOL.1998.741900

Filename

741900