Title :
A 50-GHz 0.25-μm implanted-base high-energy implanted-collector complementary modular BiCMOS (HEICBiC) technology for low-power wireless communication VLSIs
Author :
Chyan, Yih-Feng ; Carroll, Michael S. ; Ivanov, Tony G. ; Chen, Alan S. ; Nagy, William J. ; Chaudhry, Samir ; Dail, Robert W. ; Archer, Vance D. ; Ng, K.K. ; Martin, Samuel ; Oh, Minseok ; Frei, Michel R. ; Kizilyalli, Isik C. ; Huang, Robert Y. ; Thoma,
Author_Institution :
Lucent Technol., Bell Lab., Orlando, FL, USA
Abstract :
A 0.25-μm modular high-energy implanted complementary BiCMOS (HEICBiC) technology has been developed for wireless-communication VLSIs. The technology demonstrates a high fT=52 GHz and a high fTBVCEO=160 GHz-V for single-poly emitter NPN transistors and a high fT=10.7 GHz for implanted-emitter PNP transistors. It is one of the best results for single-poly BiCMOS/bipolar technologies without an epitaxial buried collector. In comparison with 0.25-μm NMOS, HEICBiC shows lower power consumption and higher RF performance
Keywords :
BiCMOS integrated circuits; MMIC; UHF integrated circuits; VLSI; ion implantation; low-power electronics; 0.25 micron; 10.7 to 160 GHz; RF performance; SHF; UHF; complementary modular BiCMOS technology; high-energy implanted-collector; implanted-base; implanted-emitter PNP transistors; low-power wireless communication VLSIs; power consumption; single-poly emitter NPN transistors; BiCMOS integrated circuits; CMOS process; CMOS technology; Implants; Integrated circuit technology; Ion implantation; MOS devices; Radio frequency; Signal processing; Very large scale integration;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 1998. Proceedings of the 1998
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-4497-9
DOI :
10.1109/BIPOL.1998.741900
