Model characterization of heterojunction bipolar transistor InP/InGaAs optoelectronic mixer

Author

Shaharuddin, N.A. ; Idrus, S.M. ; Isaak, S.

Author_Institution

Lightwave Commun. Res. Group, Univ. Teknol. Malaysia, Skudai, Malaysia

fYear

2012

fDate

1-3 Oct. 2012

Firstpage

80

Lastpage

84

Abstract

Heterojunction bipolar transistor (HBT) InP/InGaAs has been modelled and analyzed in this paper as an optoelectronic mixer (OEM). The HBT proposed was simulated by considering the wavelength of 1550nm for an up-conversion frequency of 30GHz. This transistor was simulated by using the Apsys Crosslight software. Its characteristics was further investigated to develop the appropriate structure device for OEM application. The data such as frequency up conversion, gain and bandwidth of the HBT OEM will be presented. This proposed HBT InP/InGaAs can be potentially implemented in the broadband RoF system to perform photodetection and frequency up-conversion.

Keywords

III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; mixers (circuits); optical frequency conversion; optoelectronic devices; radio-over-fibre; Apsys Crosslight software; InP-InGaAs; broadband RoF system; frequency 30 GHz; frequency upconversion; heterojunction bipolar transistor; optoelectronic mixer; photodetection; upconversion frequency; wavelength 1550 nm; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Mixers; Nonlinear optics; Optical fibers; Photonics;

fLanguage

English

Publisher

ieee

Conference_Titel

Photonics (ICP), 2012 IEEE 3rd International Conference on

Conference_Location

Penang

Print_ISBN

978-1-4673-1461-9

Type

conf

DOI

10.1109/ICP.2012.6379881

Filename

6379881