• DocumentCode
    2502457
  • Title

    Process variability-aware proactive reconfiguration technique for mitigating aging effects in nano scale SRAM lifetime

  • Author

    Pouyan, Peyman ; Amat, Esteve ; Rubio, Antonio

  • Author_Institution
    Dept. of Electron. Eng., Univ. Politec. de Catalunya, Barcelona, Spain
  • fYear
    2012
  • fDate
    23-25 April 2012
  • Firstpage
    240
  • Lastpage
    245
  • Abstract
    Process variations and device aging have a significant impact on the reliability and performance of nano scale integrated circuits. Proactive reconfiguration is an emerging technique to extend the lifetime of embedded SRAM memories. This work introduces a novel version that modifies and enhances the advantages of this method by considering the process variability impact on the memory components. Our results show between 30% and 45% SRAM lifetime increases over the existing proactive reconfiguration technique and between 1.7X and ~10X improvement over the non-proactive reconfiguration.
  • Keywords
    SRAM chips; ageing; integrated circuit reliability; nanoelectronics; device aging effects; embedded SRAM memories; nanoscale SRAM lifetime; nanoscale integrated circuits; process variability aware proactive reconfiguration technique; reliability; Aging; Degradation; Memory management; Random access memory; Reliability; Round robin; Stress; BTI Aging; Proactive Reconfiguration; Process Variation; Redundancy; SRAM;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Test Symposium (VTS), 2012 IEEE 30th
  • Conference_Location
    Hyatt Maui, HI
  • ISSN
    1093-0167
  • Print_ISBN
    978-1-4673-1073-4
  • Type

    conf

  • DOI
    10.1109/VTS.2012.6231060
  • Filename
    6231060