DocumentCode
2502565
Title
A 6-μm2 bipolar transistor using 0.25-μm process technology for high-speed applications
Author
Imoto, T. Hash ; Kikuchi, T. ; Watanabe, K. ; Wada, S. ; Tamaki, Y. ; Kondo, M. ; Natsuaki, N. ; Owada, N.
Author_Institution
Device Dev. Center, Hitachi Ltd., Tokyo, Japan
fYear
1998
fDate
27-29 Sep 1998
Firstpage
152
Lastpage
155
Abstract
An advanced bipolar-process integration technology was developed and used for fabricating a 6-μm2-cell-size transistor with high cut-off frequency of 40 GHz. This process uses 0.25-μm lithography technology and shallow and deep trench isolations for reducing parasitic capacitance. ECL circuit performance is consequently improved up to 25 ps. A combination of low-energy ion-implantation and two-step base annealing was applied to form a low-leakage and shallow base junction. This technology was applied to an ultra-fast logic LSI, so we confirmed that the 0.25-μm technology can provide bipolar transistors with sufficient performance for use in ULSIs
Keywords
ULSI; annealing; bipolar digital integrated circuits; bipolar logic circuits; emitter-coupled logic; high-speed integrated circuits; integrated circuit technology; ion implantation; isolation technology; large scale integration; lithography; 0.25 micron; 25 ps; ECL circuit performance; ULSI; advanced bipolar-process integration technology; bipolar transistor configuration; deep trench isolation; high-speed applications; lithography technology; low-energy ion-implantation; low-leakage junction; one quarter micron process technology; parasitic capacitance reduction; shallow base junction; shallow trench isolation; two-step base annealing; ultra-fast logic LSI; Annealing; Bipolar transistors; Circuit optimization; Cutoff frequency; Isolation technology; Large scale integration; Lithography; Logic; Parasitic capacitance; Ultra large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
Bipolar/BiCMOS Circuits and Technology Meeting, 1998. Proceedings of the 1998
Conference_Location
Minneapolis, MN
ISSN
1088-9299
Print_ISBN
0-7803-4497-9
Type
conf
DOI
10.1109/BIPOL.1998.741911
Filename
741911
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