Title :
Characteristics of indium implanted base NPN bipolar transistors
Author :
Tian, Hong ; Hayden, Jim ; Taylor, Bill ; Wu, Liying ; Zeng, Louie
Author_Institution :
Motorola Inc., Austin, TX, USA
Abstract :
Characteristics of indium implanted base NPN transistors are studied in this paper. In particular, the potential advantages and tradeoffs by utilizing indium implant as the base dopant are discussed based on experimental results. Device performance enhancement, key device parameter sensitivity to process conditions, device scaling, and possible implications to high speed applications are addressed. While indium implanted base bipolar transistors offer excellent hFE-VA product (>24000) and collector-emitter characteristics (BVCEO~5 V), issues such as high base resistance (>×10 boron-base NPN) and key parameter sensitivity to implant condition (high variations) must be addressed in order to fully utilize the potential advantages of indium implanted base bipolar devices
Keywords :
bipolar transistors; indium; ion implantation; semiconductor doping; 5 V; In base dopant; In implanted base bipolar devices; NPN bipolar transistors; Si:In; base resistance; device parameter sensitivity; device performance enhancement; device scaling; high speed applications; implant condition; n-p-n transistors; process conditions; BiCMOS integrated circuits; Bipolar transistors; Boron; Fabrication; Implants; Impurities; Indium; Isolation technology; Random access memory; Silicon;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 1998. Proceedings of the 1998
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-4497-9
DOI :
10.1109/BIPOL.1998.741912
