Characteristics of indium implanted base NPN bipolar transistors

Author

Tian, Hong ; Hayden, Jim ; Taylor, Bill ; Wu, Liying ; Zeng, Louie

Author_Institution

Motorola Inc., Austin, TX, USA

fYear

1998

fDate

27-29 Sep 1998

Firstpage

156

Lastpage

159

Abstract

Characteristics of indium implanted base NPN transistors are studied in this paper. In particular, the potential advantages and tradeoffs by utilizing indium implant as the base dopant are discussed based on experimental results. Device performance enhancement, key device parameter sensitivity to process conditions, device scaling, and possible implications to high speed applications are addressed. While indium implanted base bipolar transistors offer excellent h_FE-V_A product (>24000) and collector-emitter characteristics (BV_CEO~5 V), issues such as high base resistance (>×10 boron-base NPN) and key parameter sensitivity to implant condition (high variations) must be addressed in order to fully utilize the potential advantages of indium implanted base bipolar devices

Keywords

bipolar transistors; indium; ion implantation; semiconductor doping; 5 V; In base dopant; In implanted base bipolar devices; NPN bipolar transistors; Si:In; base resistance; device parameter sensitivity; device performance enhancement; device scaling; high speed applications; implant condition; n-p-n transistors; process conditions; BiCMOS integrated circuits; Bipolar transistors; Boron; Fabrication; Implants; Impurities; Indium; Isolation technology; Random access memory; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting, 1998. Proceedings of the 1998

Conference_Location

Minneapolis, MN

ISSN

1088-9299

Print_ISBN

0-7803-4497-9

Type

conf

DOI

10.1109/BIPOL.1998.741912

Filename

741912