Title :
0.5 μm/60 GHz fmax implanted base Si bipolar technology
Author :
Böck, J. ; Meister, T.F. ; Knapp, H. ; Aufinger, K. ; Wurzer, M. ; Gabl, R. ; Pohl, M. ; Boguth, S. ; Franosch, M. ; Treitinger, L.
Author_Institution :
Siemens AG, Munich, Germany
Abstract :
A 0.5 μm silicon bipolar technology for mixed digital/analogue RF applications is described. Transit frequencies of 51 GHz are achieved using low-energy implantation and subsequent RTP for base doping. A salicide layer serves to reduce base resistance. This enables maximum oscillation frequencies of 60 GHz and 14 ps ECL gate delay at the expense of only one additional mask in comparison to a silicon bipolar production technology
Keywords :
UHF integrated circuits; bipolar MMIC; elemental semiconductors; integrated circuit technology; ion implantation; mixed analogue-digital integrated circuits; rapid thermal processing; silicon; 0.5 micron; 14 ps; 23.5 GHz; 51 GHz; 60 GHz; RTP; Si:BF2; base doping; base resistance reduction; implanted base Si bipolar technology; low-energy implantation; mixed digital/analogue RF applications; salicide layer; Doping profiles; Electrodes; Fabrication; Finishing; Impedance measurement; Isolation technology; Metallization; Resists; Silicides; Transistors;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 1998. Proceedings of the 1998
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-4497-9
DOI :
10.1109/BIPOL.1998.741913
