Title :
Process HJ: a 30 GHz NPN and 20 GHz PNP complementary bipolar process for high linearity RF circuits
Author :
Wilson, M.C. ; Osborne, P.H. ; Nigrin, S. ; Goody, S.B. ; Green, J. ; Harrington, S.J. ; Cook, T. ; Thomas, S. ; Manson, A J ; Madni, A.
Author_Institution :
Mitel Semicond., Swindon, UK
Abstract :
This paper describes “Process HJ” a new high speed, low power complementary bipolar technology suitable for RF applications, which features high frequency NPN and PNP transistors of 30 GHz and 20 GHz, respectively. The technology uses fully isolated double polysilicon self-aligned architecture and 0.6 μm emitters. Resistors, capacitors, inductors and 3 levels of metallisation are also incorporated
Keywords :
UHF integrated circuits; bipolar MMIC; bipolar integrated circuits; integrated circuit technology; mixed analogue-digital integrated circuits; 0.6 micron; 20 GHz; 30 GHz; NPN transistors; PNP transistors; Process HJ; complementary bipolar process; fully isolated double polysilicon architecture; high frequency bipolar transistors; high linearity RF circuits; high speed low power technology; self-aligned architecture; three-level metallisation; Capacitors; Circuits; Implants; Inductors; Isolation technology; Linearity; Metallization; Mobile communication; Radio frequency; Resistors;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 1998. Proceedings of the 1998
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-4497-9
DOI :
10.1109/BIPOL.1998.741914
