Title :
Optimum dimensions of the epilayer for third-order intermodulation distortion
Author :
de Vreede, L.C.N. ; van Noort, W. ; Jos, H.F.F. ; de Graaff, H.C. ; Slotboom, J.W. ; Tauritz, J.L.
Author_Institution :
Dept. of Inf. Technol. & Syst., Delft Univ. of Technol., Netherlands
Abstract :
Dominant bipolar transistor distortion sources are identified with respect to the biasing conditions. Mixed-level simulator results are compared with small- and large-signal measurements. An optimum epilayer design map for third-order intermodulation distortion is presented
Keywords :
bipolar transistors; intermodulation distortion; semiconductor device measurement; biasing conditions; bipolar transistor distortion sources; intermodulation distortion; large-signal measurements; mixed-level simulator; optimum dimensions; optimum epilayer design map; small-signal measurements; third-order IMD; Bipolar transistors; Circuit simulation; Computational modeling; Distortion measurement; Intermodulation distortion; Microwave devices; Nonlinear distortion; Radiofrequency amplifiers; Scattering parameters; Voltage;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 1998. Proceedings of the 1998
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-4497-9
DOI :
10.1109/BIPOL.1998.741916
