A new class of lateral power devices for HVIC´s based on the 3D RESURF concept

Author

Udrea, F. ; Popescu, A. ; Milne, W.I.

Author_Institution

Dept. of Eng., Cambridge Univ., UK

fYear

1998

fDate

27-29 Sep 1998

Firstpage

187

Lastpage

190

Abstract

This paper reports a new device concept applicable to a large class of power devices which we term 3D power devices. The concept is based on 3D fundamental forward blocking and 3D on-state operation using a transversal junction perpendicular on the axis between the main terminals. This junction acts effectively to spread uniformly the potential in the blocking mode and allows 3D minority injection across it in the on-state. Several devices are reported, and demonstrated through 2D Medici and 3D Davinci simulations

Keywords

minority carriers; power MOSFET; power integrated circuits; semiconductor device breakdown; semiconductor device models; 2D Medici simulations; 3D Davinci simulations; 3D RESURF concept; 3D fundamental forward blocking; 3D minority injection; 3D onstate operation; 3D power devices; HVIC; double-gate MOSFET; lateral power devices; single-gate MOSFET; transversal junction; Anodes; Breakdown voltage; Cathodes; Diodes; Electric breakdown; Isolation technology; Medical simulation; Power engineering and energy; Power integrated circuits; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting, 1998. Proceedings of the 1998

Conference_Location

Minneapolis, MN

ISSN

1088-9299

Print_ISBN

0-7803-4497-9

Type

conf

DOI

10.1109/BIPOL.1998.741921

Filename

741921