Title :
A new class of lateral power devices for HVIC´s based on the 3D RESURF concept
Author :
Udrea, F. ; Popescu, A. ; Milne, W.I.
Author_Institution :
Dept. of Eng., Cambridge Univ., UK
Abstract :
This paper reports a new device concept applicable to a large class of power devices which we term 3D power devices. The concept is based on 3D fundamental forward blocking and 3D on-state operation using a transversal junction perpendicular on the axis between the main terminals. This junction acts effectively to spread uniformly the potential in the blocking mode and allows 3D minority injection across it in the on-state. Several devices are reported, and demonstrated through 2D Medici and 3D Davinci simulations
Keywords :
minority carriers; power MOSFET; power integrated circuits; semiconductor device breakdown; semiconductor device models; 2D Medici simulations; 3D Davinci simulations; 3D RESURF concept; 3D fundamental forward blocking; 3D minority injection; 3D onstate operation; 3D power devices; HVIC; double-gate MOSFET; lateral power devices; single-gate MOSFET; transversal junction; Anodes; Breakdown voltage; Cathodes; Diodes; Electric breakdown; Isolation technology; Medical simulation; Power engineering and energy; Power integrated circuits; Silicon;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 1998. Proceedings of the 1998
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-4497-9
DOI :
10.1109/BIPOL.1998.741921
