Title :
The Mirrored Lateral SCR (MILSCR) as an ESD protection structure for smart power applications
Author :
Delage, C. ; Nolhier, N. ; Bafleur, M. ; Dorkel, J.M. ; Hamid, J. ; Givelin, P. ; Lin-Kwang, J.
Author_Institution :
Motorola Semicond., Toulouse, France
Abstract :
In this paper, we first present a methodology for the application of two-dimensional device simulation to ESD events. The correlation of ESD simulation results with experimental data is illustrated by the example of a grounded base n-p-n transistor. Secondly, we present a novel double-polarity ESD protection structure for smart power applications, the Mirrored Lateral SCR (MILSCR): simulated and experimental results are compared
Keywords :
electrostatic discharge; failure analysis; power integrated circuits; protection; semiconductor device models; thyristor applications; thyristors; ESD events; ESD simulation; double-polarity ESD protection structure; electrostatic discharge protection; grounded base n-p-n transistor; mirrored lateral SCR; smart power applications; two-dimensional device simulation; Discrete event simulation; Electrostatic discharge; Failure analysis; Heating; Lattices; Power system protection; Temperature; Thermal resistance; Thyristors; Voltage;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 1998. Proceedings of the 1998
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-4497-9
DOI :
10.1109/BIPOL.1998.741922
