Title :
Analytical high-current model for the transit time of SiGe HBTs
Author :
Wilms, Stefan ; Rein, Hans-Martin
Author_Institution :
Ruhr-Univ., Bochum, Germany
Abstract :
For accurate modeling the transit time of “true” SiGe HBTs up to high current densities, analytical equations have been derived and verified by both device simulations and measurements. They are part of a new compact model, which has just been implemented into a commercial circuit simulator
Keywords :
Ge-Si alloys; current density; heterojunction bipolar transistors; semiconductor device models; semiconductor materials; SiGe; SiGe HBTs; commercial circuit simulator; compact model; device simulations; high current densities; high-current model; transit time; Analytical models; Circuit simulation; Current density; Doping profiles; Equations; Germanium silicon alloys; Heterojunction bipolar transistors; Integrated circuit modeling; Semiconductor process modeling; Silicon germanium;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 1998. Proceedings of the 1998
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-4497-9
DOI :
10.1109/BIPOL.1998.741924
