DocumentCode
2502805
Title
Analytical high-current model for the transit time of SiGe HBTs
Author
Wilms, Stefan ; Rein, Hans-Martin
Author_Institution
Ruhr-Univ., Bochum, Germany
fYear
1998
fDate
27-29 Sep 1998
Firstpage
199
Lastpage
202
Abstract
For accurate modeling the transit time of “true” SiGe HBTs up to high current densities, analytical equations have been derived and verified by both device simulations and measurements. They are part of a new compact model, which has just been implemented into a commercial circuit simulator
Keywords
Ge-Si alloys; current density; heterojunction bipolar transistors; semiconductor device models; semiconductor materials; SiGe; SiGe HBTs; commercial circuit simulator; compact model; device simulations; high current densities; high-current model; transit time; Analytical models; Circuit simulation; Current density; Doping profiles; Equations; Germanium silicon alloys; Heterojunction bipolar transistors; Integrated circuit modeling; Semiconductor process modeling; Silicon germanium;
fLanguage
English
Publisher
ieee
Conference_Titel
Bipolar/BiCMOS Circuits and Technology Meeting, 1998. Proceedings of the 1998
Conference_Location
Minneapolis, MN
ISSN
1088-9299
Print_ISBN
0-7803-4497-9
Type
conf
DOI
10.1109/BIPOL.1998.741924
Filename
741924
Link To Document