• DocumentCode
    2502816
  • Title

    A compact tunneling current and collector breakdown model

  • Author

    Schröter, M. ; Yan, Z. ; Lee, T.Y. ; Shi, W.

  • Author_Institution
    Rockwell Semicond. Syst., Newport Beach, CA, USA
  • fYear
    1998
  • fDate
    27-29 Sep 1998
  • Firstpage
    203
  • Lastpage
    206
  • Abstract
    Analytical models for base-emitter tunneling current and base-collector breakdown (weak avalanche) are presented. The new formulations are quite simple, contain only two additional model parameters each and incorporate the respective depletion capacitance models. Since the formulations are physics-based, they are easily extended towards lateral scaleability and temperature-dependence. The formulations can be directly implemented and deployed in compact BJT models for circuit simulation, and allow a straightforward parameter extraction. The models show good agreement with measured results over bias and temperature for device structures with different geometries
  • Keywords
    avalanche breakdown; bipolar transistors; capacitance; equivalent circuits; semiconductor device breakdown; semiconductor device models; tunnelling; base-collector breakdown; base-emitter tunneling current; circuit simulation; collector breakdown model; compact BJT model; depletion capacitance models; lateral scaleability; parameter extraction; temperature dependence; tunneling current model; weak avalanche; Analytical models; Avalanche breakdown; Capacitance; Circuit simulation; Electric breakdown; Geometry; Parameter extraction; Solid modeling; Temperature; Tunneling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Bipolar/BiCMOS Circuits and Technology Meeting, 1998. Proceedings of the 1998
  • Conference_Location
    Minneapolis, MN
  • ISSN
    1088-9299
  • Print_ISBN
    0-7803-4497-9
  • Type

    conf

  • DOI
    10.1109/BIPOL.1998.741925
  • Filename
    741925