Title :
Improved extraction method for the emitter resistance of bipolar transistors
Author :
Gabl, R. ; Reisch, M. ; Pohl, M.
Author_Institution :
Dept. of Corporate Technol., Siemens AG, Munich, Germany
Abstract :
The open-collector method for determination of the emitter series resistance is analysed. From basic semiconductor equations an accurate relation for the collector-emitter voltage which is valid for high injection into the low-doped epitaxial collector region is derived. This new description allows us to predict the non-linear VCE(IE) behaviour which depends on properties of the collector region and the parasitic p-n-p transistor. Furthermore the relation provides an improved extraction procedure for the emitter resistance from open-collector measurements. This method is applied to advanced integrated bipolar transistors and its accuracy is demonstrated by comparing the results to that of the Ning and Tang (1984) method and by device simulations
Keywords :
bipolar integrated circuits; bipolar transistors; electric resistance; integrated circuit modelling; semiconductor device models; advanced integrated bipolar transistors; bipolar transistor emitter resistance; collector region; collector-emitter voltage; extraction method; high injection; low-doped epitaxial collector region; nonlinear V-I behaviour; open-collector measurements; open-collector method; parasitic p-n-p transistor; semiconductor equations; series resistance; Bipolar transistors; Conductors; Electrical resistance measurement; Germanium silicon alloys; Identity-based encryption; Microelectronics; Nonlinear equations; Physics; Silicon germanium; Voltage;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 1998. Proceedings of the 1998
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-4497-9
DOI :
10.1109/BIPOL.1998.741927
