Title :
Silicon evaluation of faster than at-speed transition delay tests
Author :
Chakravarty, S. ; Devta-Prasanna, N. ; Gunda, A. ; Ma, J. ; Yang, F. ; Guo, H. ; Lai, R. ; Li, D.
Author_Institution :
LSI Corp., Milpitas, CA, USA
Abstract :
Researchers, based primarily on theoretical analysis of different coverage metric, have proposed the need to cover small delay defect (SDD). There is very little silicon data justifying the need to add SDD tests to the manufacturing flow. This paper attempts to fill this gap. A high volume manufacturing experiment to ascertain the added screening capability of defective parts and infant mortality of FAST_TDF tests are described. Quantitative silicon data are presented.
Keywords :
elemental semiconductors; logic testing; silicon; FAST_TDF tests; faster than at-speed transition delay tests evaluation; high volume manufacturing; small delay defect; Clocks; Iron; Logic gates; Silicon; TV; Faster than at-speed Transition Delay Tests; Long Path Transition Delay Tests; Small Delay Defects;
Conference_Titel :
VLSI Test Symposium (VTS), 2012 IEEE 30th
Conference_Location :
Hyatt Maui, HI
Print_ISBN :
978-1-4673-1073-4
DOI :
10.1109/VTS.2012.6231084
