Title :
Multijunction III-V solar cells: recent and projected results
Author :
MacMillan, H.F. ; Hamaker, H.C. ; Virshup, G.F. ; Werthen, J.G.
Author_Institution :
Varian Res. Center, Palo Alto, CA, USA
Abstract :
The authors discuss Varian´s strategy for developing high-efficiency multijunction cells. Cell performance data are reviewed and compared to computer modeling performance projections for two and three-junction cascade cells. Results are presented for single-junction and multijunction monolithic structures fabricated with the AlGaAs-GaAs-InGaAs materials system grown by metal-organic chemical vapor deposition. The problems and progress for lattice-matched and lattice-mismatched structures and cell interconnects are discussed and assessed. It is concluded that the latest results are significant steps towards a demonstration of the viability of cascade cells. The hurdles to be overcome in an effort to achieve efficiencies above 30% are discussed.
Keywords :
III-V semiconductors; aluminium compounds; chemical vapour deposition; gallium arsenide; indium compounds; p-n heterojunctions; semiconductor growth; solar cells; AlGaAs; GaAs; III-V semiconductors; InGaAs; Varian strategy; computer modeling performance projections; high-efficiency multijunction cells; lattice-mismatched structures; latticed matched structures; metal-organic chemical vapor deposition; multijunction monolithic structures; single-junction cells; solar cells; three-junction cascade cells; two-junction cascade cells; Chemical vapor deposition; Costs; Current-voltage characteristics; Gallium arsenide; III-V semiconductor materials; Indium gallium arsenide; Inorganic materials; MOCVD; Photonic band gap; Photovoltaic cells; Photovoltaic systems; Satellites;
Conference_Titel :
Photovoltaic Specialists Conference, 1988., Conference Record of the Twentieth IEEE
Conference_Location :
Las Vegas, NV, USA
DOI :
10.1109/PVSC.1988.105654
