A self-consistent numerical model of thin film silicon hydrogen-alloy solar cells

Author

Park, J.W. ; Schwartz, R.J. ; Gray, J.L. ; Turner, G.B.

Author_Institution

Sch. of Electr. Eng., Purdue Univ., West Lafayette, IN, USA

fYear

1988

fDate

1988

Firstpage

55

Abstract

A self-consistent numerical model incorporating exponential tail states and Gaussian-distributed dangling bond states and doping states within the mobility gap is proposed to explain the results of experimental measurements of the dark conductivity, photoconductivity, and performance characteristics of thin-film Si:H solar cells. A one-to-one relationship between fourfold coordinated doping atoms and dangling bonds is included in the model. The model calculation correctly predicts the dependence of dark conductivity on temperature and doping. It exhibits saturation at high phosphorus doping levels as experimentally observed, and correctly predicts the nonlinear dependence of photoconductivity on light intensity.

Keywords

amorphous semiconductors; carrier mobility; dangling bonds; electrical conductivity of amorphous semiconductors and insulators; elemental semiconductors; hydrogen; photoconductivity; semiconductor device models; semiconductor thin films; silicon; solar cells; Gaussian-distributed dangling bond states; dark conductivity; doping states; exponential tail states; fourfold coordinated doping atoms; light intensity; mobility gap; photoconductivity; self-consistent numerical model; semiconductor thin films; thin film; thin film Si:H solar cells; Bonding; Conductivity; Doping; Numerical models; Photoconductivity; Photovoltaic cells; Semiconductor process modeling; Semiconductor thin films; Silicon; Tail;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 1988., Conference Record of the Twentieth IEEE

Conference_Location

Las Vegas, NV, USA

Type

conf

DOI

10.1109/PVSC.1988.105655

Filename

105655