Title :
Structural investigation of hydrogenated amorphous silicon germanium alloys
Author :
Muramatsu, Shin-ichi ; Kajiyama, Hiroshi ; Itoh, Haruo ; Matsubara, Sunao ; Shimada, Toshikazu
Author_Institution :
Hitachi Ltd., Tokyo, Japan
Abstract :
Hydrogenated amorphous silicon germanium (a-Si1-xGex:H) alloys for solar cells are investigated to clarify the relation between microstructures and photoelectric properties. Medium-range order alloy structures are investigated using small-angle X-ray scattering with the aid of other techniques. A decrease in the densities of microstructures caused by (SiH2)n, SiH3, and SiH2 is shown to be effective in improving the photoelectric properties in the Si-rich region. It is also shown that a-Si:H and a-Ge:H have a domain and wall-type microstructure. At around x=0.5, alloys are found to assume a fractal structure. This phenomenon seems to relate closely to drastic quality deterioration at Eg<1.4 eV.
Keywords :
Ge-Si alloys; X-ray scattering; amorphous semiconductors; fractals; hydrogen; noncrystalline state structure; photoelectricity; solar cells; Si1-xGe:H alloys; SiH2; SiH2)n; SiH3; domain microstructure; fractal structure; microstructures; photoelectric properties; semiconductor; small-angle X-ray scattering; solar cells; wall-type microstructure; Amorphous silicon; Atomic measurements; Conductive films; Conductivity measurement; Fractals; Germanium alloys; Germanium silicon alloys; Infrared spectra; Microstructure; Microwave measurements; Photovoltaic cells; Plasma measurements; Raman scattering; Silicon alloys; Silicon germanium; Spectroscopy; X-ray scattering;
Conference_Titel :
Photovoltaic Specialists Conference, 1988., Conference Record of the Twentieth IEEE
Conference_Location :
Las Vegas, NV, USA
DOI :
10.1109/PVSC.1988.105656
