DocumentCode
2502929
Title
The stability of multi-junction a-Si solar cells
Author
Bennett, M.S. ; Rajan, K.
Author_Institution
Solarex Corp., Newtown, PA, USA
fYear
1988
fDate
1988
Firstpage
67
Abstract
Experimental results on the stability of multijunction cells are presented. It is demonstrated that multijunction cells are more stable than single-junction cells and that the stability improves as the number of junctions increases. It is further shown that the rate of degradation of multijunction devices can be explained in terms of the rates of degradation of their individual i layers. It is thus possible to predict the amount of photodegeneration of multijunction devices after prolonged light soaking, knowing the rates of degradation of single-junction cells in terms of the i-layer thicknesses and the intensity of the illumination to which they are exposed.
Keywords
amorphous semiconductors; elemental semiconductors; hydrogen; p-n junctions; silicon; solar cells; Si:H solar cells; i layers; light soaking; photodegeneration; single-junction cells; Degradation; Glass; Lamps; Lighting; Photonic band gap; Photovoltaic cells; Stability; Temperature; Tin; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference, 1988., Conference Record of the Twentieth IEEE
Conference_Location
Las Vegas, NV, USA
Type
conf
DOI
10.1109/PVSC.1988.105657
Filename
105657
Link To Document