• DocumentCode
    2502929
  • Title

    The stability of multi-junction a-Si solar cells

  • Author

    Bennett, M.S. ; Rajan, K.

  • Author_Institution
    Solarex Corp., Newtown, PA, USA
  • fYear
    1988
  • fDate
    1988
  • Firstpage
    67
  • Abstract
    Experimental results on the stability of multijunction cells are presented. It is demonstrated that multijunction cells are more stable than single-junction cells and that the stability improves as the number of junctions increases. It is further shown that the rate of degradation of multijunction devices can be explained in terms of the rates of degradation of their individual i layers. It is thus possible to predict the amount of photodegeneration of multijunction devices after prolonged light soaking, knowing the rates of degradation of single-junction cells in terms of the i-layer thicknesses and the intensity of the illumination to which they are exposed.
  • Keywords
    amorphous semiconductors; elemental semiconductors; hydrogen; p-n junctions; silicon; solar cells; Si:H solar cells; i layers; light soaking; photodegeneration; single-junction cells; Degradation; Glass; Lamps; Lighting; Photonic band gap; Photovoltaic cells; Stability; Temperature; Tin; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference, 1988., Conference Record of the Twentieth IEEE
  • Conference_Location
    Las Vegas, NV, USA
  • Type

    conf

  • DOI
    10.1109/PVSC.1988.105657
  • Filename
    105657