Title :
Preparation of high quality a-SiGe:H films and its application to the high efficiency triple-junction amorphous solar cells
Author :
Sato, K. ; Kawabata, K. ; Terazono, S. ; Ishihara, T. ; Sasaki, H. ; Deguchi, M. ; Itagaki, T. ; Morikawa, H. ; Aiga, M. ; Fujikawa, K.
Author_Institution :
Mitsubishi Electr. Corp., Hyogo, Japan
Abstract :
The optical and electrical properties of a-SiGe:H films with optical gaps of 1.45-1.55 eV were evaluated and the corresponding solar cell performances were compared. Taking into account the influence of Ge and hydrogen content, the deposition conditions were chosen so as to obtain films with high ratios of photoconductivity to dark conductivity. An enhancement in the spectral response of a-SiGe:H p-i-n cells at long wavelengths was obtained as a result of an improvement in film quality and the utilization of a black reflector. High-efficiency triple-junction solar cells using the a-SiGe:H p-i-n cells as bottom cells were fabricated to achieve 9.5% efficiency for a cell size of 100 cm2.
Keywords :
Ge-Si alloys; amorphous semiconductors; energy gap; hydrogen; optical constants; p-n junctions; photoconductivity; plasma deposition; semiconductor growth; solar cells; 9.5 percent; SiGe:H films; a-SiGe:H films; black reflector; dark conductivity; deposition conditions; electrical properties; glow discharge deposition; high efficiency; optical gaps; p-i-n cells; photoconductivity; semiconductor; spectral response; triple-junction amorphous solar cells; Alloying; Amorphous materials; Conductive films; Conductivity; Degradation; Hydrogen; Lighting; Optical films; PIN photodiodes; Performance evaluation; Photoconductivity; Photovoltaic cells;
Conference_Titel :
Photovoltaic Specialists Conference, 1988., Conference Record of the Twentieth IEEE
Conference_Location :
Las Vegas, NV, USA
DOI :
10.1109/PVSC.1988.105658
