A 45 GHz strained-layer SiGe heterojunction bipolar transister fabricated with low temperature epitaxy

Author

Fischer, S.E. ; Cook, R.K. ; Knepper, R.W. ; Lange, R.C. ; Nummy, K. ; Ahlgren, D.C. ; Revitz, M. ; Meyerson, B.S.

Author_Institution

IBM Gen. Technol. Div., Hopewell Junction, NY, USA

fYear

1989

fDate

3-6 Dec. 1989

Firstpage

890

Lastpage

892

Abstract

Strained-layer Si-SiGe heterojunction bipolar transistors with f/sub t/ as high as 45 GHz are reported. The device structure incorporates a 65 nm SiGe graded base, with a peak Ge concentration of 11%, grown by UHV/CVD (ultrahigh vacuum/chemical vapor deposition) low-temperature epitaxy. The devices show a 10* collector current enhancement and a 30% reduction in base transit time to 2.6 ps.<>

Keywords

Ge-Si alloys; elemental semiconductors; heterojunction bipolar transistors; semiconductor epitaxial layers; semiconductor growth; semiconductor materials; silicon; vapour phase epitaxial growth; 2.6 ps; 45 GHz; Si-SiGe heterojunction bipolar transistors; UHV/CVD; base transit time; collector current enhancement; low temperature epitaxy; peak germanium concentration; strained layer HBT; ultrahigh vacuum/chemical vapor deposition; Bipolar transistors; Boron; Epitaxial growth; Frequency measurement; Germanium silicon alloys; Heterojunction bipolar transistors; Silicon germanium; Temperature; Testing; Very large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1989. IEDM '89. Technical Digest., International

Conference_Location

Washington, DC, USA

ISSN

0163-1918

Print_ISBN

0-7803-0817-4

Type

conf

DOI

10.1109/IEDM.1989.74197

Filename

74197