Deep submicron Cu planar interconnection technology using Cu selective chemical vapor deposition

Summary form only given. The development of deep submicron planar interconnection technology based on Cu selective CVD is reported. In this CVD process, fine Cu etching is no longer required. The adhesion between Cu and the interlevel insulator is improved by the introduction of a W layer, which suppresses the Cu interdiffusion. The layer of W under the Cu results in the enhancement of Cu nucleus generation. The wafer surface becomes planar after each level of the interconnection and via formation. The Cu interconnections formed by selective CVD exhibit resistivity of about 2 mu Omega -cm.<>