Monolithic integration of HEMTs and HBTs on an InP substrate and its application to OEICs

Author

Sasaki, G. ; Hong, W. ; Chang, G. ; Bhat, R. ; Hayes, J.R.

Author_Institution

Bellcore, Red Bank, NJ, USA

fYear

1989

fDate

3-6 Dec. 1989

Firstpage

896

Lastpage

898

Abstract

Summary form only given. The first realization of the integration of HEMTs (high electron mobility transistors) and HBTs (heterojunction bipolar transistors) on an InP substrate is reported. Furthermore, the application of this technology to a receiver OEIC (optoelectronic integrated circuit) is demonstrated by integrating these devices monolithically with a p-i-n photodiode to form an OEIC comprising these three diverse components. This complex integration was made possible using the selective regrowth capabilities of OMCVD (organometallic chemical vapor deposition). The schematic cross section of a receiver OEIC thus obtained is shown.<>

Keywords

III-V semiconductors; chemical vapour deposition; heterojunction bipolar transistors; high electron mobility transistors; indium compounds; integrated optoelectronics; photodiodes; HBTs; HEMTs; InP; OMCVD; optoelectronic integrated circuit; organometallic chemical vapor deposition; p-i-n photodiode; receiver OEIC; schematic cross section; selective regrowth capabilities; Application specific integrated circuits; Chemical technology; HEMTs; Heterojunction bipolar transistors; Indium phosphide; Integrated circuit technology; MODFETs; Monolithic integrated circuits; Optoelectronic devices; PIN photodiodes;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1989. IEDM '89. Technical Digest., International

Conference_Location

Washington, DC, USA

ISSN

0163-1918

Print_ISBN

0-7803-0817-4

Type

conf

DOI

10.1109/IEDM.1989.74199

Filename

74199