Title :
A study on the surface reaction in the growth of amorphous silicon by intermittent deposition method
Author :
Ishimura, T. ; Okayasu, Y. ; Yamamoto, H. ; Fukui, K.
Author_Institution :
Toa Nenryo Kogyo K.K., Saitama, Japan
Abstract :
The surface reaction in the glow discharge plasma growth of a-Si:H for solar cells was studied by the intermittent deposition method in which two kinds of gases are exchanged at short intervals; one is used for growing silicon film: the other for modifying the growing surface. It was found that the fluorine elimination process has an activation energy of 7 meV and that fluorine in the region of 8 A below the growing surface is removed by hydrogen radicals at 250 degrees C. The Si:H prepared by this method has a high photoconductivity of 4*10-4 ( Omega -cm)-1 under AM1 100-mW/cm2 light and a high photosensitivity of 106. This film shows smaller photodegradation than conventional a-Si:H.
Keywords :
amorphous semiconductors; elemental semiconductors; hydrogen; photoconductivity; plasma CVD; semiconductor growth; semiconductor thin films; silicon; solar cells; surface chemistry; F elimination; Si:H; activation energy; amorphous semiconductor; growing surface; intermittent deposition method; photoconductivity; photodegradation; photosensitivity; surface reaction; Amorphous silicon; Gases; Glow discharges; Hydrogen; Laboratories; Photoconductivity; Photovoltaic cells; Plasmas; Semiconductor films; Substrates; Surface discharges; Temperature distribution;
Conference_Titel :
Photovoltaic Specialists Conference, 1988., Conference Record of the Twentieth IEEE
Conference_Location :
Las Vegas, NV, USA
DOI :
10.1109/PVSC.1988.105669
