A study on the surface reaction in the growth of amorphous silicon by intermittent deposition method

Author

Ishimura, T. ; Okayasu, Y. ; Yamamoto, H. ; Fukui, K.

Author_Institution

Toa Nenryo Kogyo K.K., Saitama, Japan

fYear

1988

fDate

1988

Firstpage

114

Abstract

The surface reaction in the glow discharge plasma growth of a-Si:H for solar cells was studied by the intermittent deposition method in which two kinds of gases are exchanged at short intervals; one is used for growing silicon film: the other for modifying the growing surface. It was found that the fluorine elimination process has an activation energy of 7 meV and that fluorine in the region of 8 A below the growing surface is removed by hydrogen radicals at 250 degrees C. The Si:H prepared by this method has a high photoconductivity of 4*10^-4 ( Omega -cm)^-1 under AM1 100-mW/cm² light and a high photosensitivity of 10⁶. This film shows smaller photodegradation than conventional a-Si:H.

Keywords

amorphous semiconductors; elemental semiconductors; hydrogen; photoconductivity; plasma CVD; semiconductor growth; semiconductor thin films; silicon; solar cells; surface chemistry; F elimination; Si:H; activation energy; amorphous semiconductor; growing surface; intermittent deposition method; photoconductivity; photodegradation; photosensitivity; surface reaction; Amorphous silicon; Gases; Glow discharges; Hydrogen; Laboratories; Photoconductivity; Photovoltaic cells; Plasmas; Semiconductor films; Substrates; Surface discharges; Temperature distribution;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 1988., Conference Record of the Twentieth IEEE

Conference_Location

Las Vegas, NV, USA

Type

conf

DOI

10.1109/PVSC.1988.105669

Filename

105669