• DocumentCode
    2503190
  • Title

    Defects in amorphous silicon germanium alloys

  • Author

    Fortmann, C.M. ; Tu, J.C.

  • Author_Institution
    Solarex Corp., Newtown, PA, USA
  • fYear
    1988
  • fDate
    1988
  • Firstpage
    139
  • Abstract
    The electrical, optical, and stability properties of the materials in the Si1-y-xGexHy (00.43Ge0.52H0.05 with Eg=1.3 eV.
  • Keywords
    Ge-Si alloys; amorphous semiconductors; carrier lifetime; carrier mobility; electrical conductivity of amorphous semiconductors and insulators; energy gap; hydrogen; noncrystalline state structure; optical constants; solar cells; Si1-y-xGexHy; a-Si0.43Ge0.52H0.05; amorphous SiGe:H; annealed materials; electrical properties; electron mobility lifetime; electronic transport properties; light-induced effects; optical bandgap; optical properties; semiconductor; solar cells; stability; Amorphous silicon; Electron mobility; Electron optics; Germanium alloys; Hydrogen; Lighting control; Optical materials; Photonic band gap; Photovoltaic cells; Stability;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference, 1988., Conference Record of the Twentieth IEEE
  • Conference_Location
    Las Vegas, NV, USA
  • Type

    conf

  • DOI
    10.1109/PVSC.1988.105675
  • Filename
    105675
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2503190