DocumentCode
2503224
Title
Investigation of variously composed p/i junctions in amorphous silicon solar cells by time of flight and spectral response measurements
Author
Karg, F.H. ; Dietrich, K. ; Kusian, W. ; Kausche, H.
Author_Institution
Siemens Res. Lab., Munich, West Germany
fYear
1988
fDate
1988
Firstpage
149
Abstract
Amorphous p-SiC/Si heterojunctions with carbon or phosphorus buffer layers were investigated by spectral response and delayed field measurements. Both buffer types enhance the carrier lifetime at the interface and the blue response. The compensate for the negative influence of cross-contaminated boron, the primary origin of low blue response. A model of a buffer layer conceived to operate efficiently demonstrated the correlation between the length of the carbon buffer layer and the boron cross contamination. In addition the interface lifetime depends on the deposition sequence. Deposition of undoped SiC onto a-Si:H is associated with shallow electron traps, while the reverse sequence shows a very low interface state density.
Keywords
amorphous semiconductors; carrier lifetime; electron traps; interface electron states; semiconductor junctions; semiconductor materials; silicon alloys; solar cells; SiC-C-Si; SiC-P-Si; amorphous SiC-Si heterojunctions; blue response; buffer layers; carrier lifetime; cross contaminated B; deposition sequence; low interface state density; p-SiC/Si; p/i junctions; semiconductor; shallow electron traps; solar cells; spectral response measurements; time of flight; Amorphous materials; Amorphous silicon; Boron; Buffer layers; Charge carrier lifetime; Delay; Heterojunctions; Photovoltaic cells; Pollution measurement; Time measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference, 1988., Conference Record of the Twentieth IEEE
Conference_Location
Las Vegas, NV, USA
Type
conf
DOI
10.1109/PVSC.1988.105677
Filename
105677
Link To Document