DocumentCode
2503698
Title
A new 200 A, 500 V cascade BIMOS power module for high power and high frequency inverter applications
Author
Majumdar, Gourab ; Yuu, Y. ; Iida, T.
Author_Institution
Mitsubishi, Electr. Corp., Osaka, Japan
fYear
1988
fDate
1-5 Feb 1988
Firstpage
226
Lastpage
235
Abstract
The development of a high-power cascade BIMOS module is reported. A cascade BIMOS is a Darlington configuration of a high-voltage MOSFET and a bipolar transistor of equal voltage rating, where the MOSFET constitutes the input stage and drives the output-stage bipolar transistor. The module is rated at 500 V, 200 A and is designed for high-power and high-frequency operation. The merits of the module are illustrated by means of various static and dynamic characteristics, ratings and performances
Keywords
bipolar transistors; insulated gate field effect transistors; invertors; power transistors; 200 A; 500 V; Darlington configuration; MOSFET; bipolar transistor; cascade BIMOS power module; dynamic characteristics; inverter; performances; power transistors; ratings; static characteristics; Bipolar transistors; Capacitance; Circuits; Frequency; Insulated gate bipolar transistors; Inverters; MOSFETs; Multichip modules; Threshold voltage; Voltage control;
fLanguage
English
Publisher
ieee
Conference_Titel
Applied Power Electronics Conference and Exposition, 1988. APEC '88. Conference Proceedings 1988., Third Annual IEEE
Conference_Location
New Orleans, LA
Type
conf
DOI
10.1109/APEC.1988.10570
Filename
10570
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