DocumentCode :
2503894
Title :
Determination and analysis of the performance and degradation of a-Si modules using outdoor, simulator and open-circuit-voltage decay (OCVD) measurements
Author :
Klotz, H. ; Massano, G. ; Sarno, A. ; Zavarese, L.
Author_Institution :
ENEA CRIF, Portici, Italy
fYear :
1988
fDate :
1988
Firstpage :
301
Abstract :
The authors attempted to obtain a reproducible outdoor performance evaluation for a-Si modules and to conduct a systematic study of the degradation effect. With this aim, the modules were exposed to natural sunlight and periodically characterized in a solar simulator by the measurement of the I/V curve and OCVD. These procedures were applied to state-of-the-art a-Si modules from various manufacturers, realized by different technologies, in order to compare their performance and degradation. Performance degradation of a-Si modules results mostly from a reduction of the fill factor. This is caused by an increase of the serial resistance due to corrosion in the intercell zone and a decrease of the lifetime of the minority carriers in the intrinsic layer due to the light-induced degradation effect. The long-term performance is very sensitive to the intrinsic layer thickness. It is shown that it is possible to reduce the degradation significantly by designing a tandem cell structure having the same bandgap and low i-layer thicknesses.
Keywords :
amorphous semiconductors; carrier lifetime; photoconductivity; semiconductor device testing; silicon; solar cells; I-V characteristic; Si solar cells; amorphous semiconductors; bandgap; corrosion; degradation effect; fill factor; intercell zone; minority carriers; open-circuit-voltage decay; outdoor performance evaluation; serial resistance; solar simulator; state-of-the-art; sunlight; tandem cell structure; Analytical models; Art; Charge carrier lifetime; Corrosion; Degradation; Manufacturing; Performance analysis; Photonic band gap; Pulse measurements; Quality control; Temperature sensors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference, 1988., Conference Record of the Twentieth IEEE
Conference_Location :
Las Vegas, NV, USA
Type :
conf
DOI :
10.1109/PVSC.1988.105709
Filename :
105709
Link To Document :
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