Title :
The optical properties of the thin film Au/a-Si:H Schottky junction structures
Author :
Kezuka, H. ; Akimoto, M. ; Gekka ; Taguchi, Y.
Author_Institution :
Dept. of Electron., Tokyo Eng. Univ., Japan
Abstract :
The optical constants, as a surface impedance, of thin-film Au/a-Si:H Schottky junction solar-cell structures were measured using the pseudo-Brewster angle method. The a-Si:H films were deposited on the surface of crystalline Si wafer using tetrode RF sputtering for a pressure ratio of hydrogen to argon gas at 0 to 30%. The thin-film Au/a-Si:H Schottky junction structure was fabricated by vacuum deposition of Au film of 100-AA thickness on the surface of a-Si:H films. The optical constants measured by the pseudo-Brewster angle method compared well with values calculated on the basis of the Fresnel-equation method.
Keywords :
Schottky effect; amorphous semiconductors; elemental semiconductors; gold; hydrogen; metallic thin films; optical constants; semiconductor thin films; semiconductor-metal boundaries; silicon; solar cells; sputtered coatings; vacuum deposited coatings; Au-Si:H solar cells; Fresnel-equation method; Schottky junction; amorphous semiconductors; optical constants; pseudo-Brewster angle method; surface impedance; tetrode RF sputtering; vacuum deposition; Argon; Crystallization; Gold; Hydrogen; Impedance measurement; Optical films; Radio frequency; Semiconductor films; Sputtering; Surface impedance;
Conference_Titel :
Photovoltaic Specialists Conference, 1988., Conference Record of the Twentieth IEEE
Conference_Location :
Las Vegas, NV, USA
DOI :
10.1109/PVSC.1988.105710
