DocumentCode
2503976
Title
Structural properties of weakly absorbing highly conductive SiC thin films prepared in a TCDDC system
Author
Willeke, G. ; Martins, R.
Author_Institution
IMEC, Leuven, Belgium
fYear
1988
fDate
1988
Firstpage
320
Abstract
Diffraction and other structural measurements on n-type SiC thin films prepared in a TCDDC (two consecutive decomposition and deposition chamber) system indicate the presence of Si microcrystals (without evidence for SiC crystallites). Weakly absorbing, highly conductive layers ( sigma >or=10-1 ( Omega -cm)-1) contain up to 20 at.% C and 25 at.% O. The optoelectronic properties of these films can be explained in terms of a sufficient volume fraction (above the percolation threshold) of Si microcrystals surrounded by an a-Si:C,O,H matrix.
Keywords
amorphous semiconductors; carbon; elemental semiconductors; hydrogen; oxygen; silicon; solar cells; Si:C,O,H solar cells; SiC thin films; amorphous semiconductors; decomposition; deposition; microcrystals; optoelectronic properties; structural measurements; Absorption; Conductive films; Conductivity measurement; Crystallization; Diffraction; Gases; Glow discharges; Optical films; Photonic band gap; Plasma measurements; Semiconductor films; Semiconductor thin films; Silicon carbide; Sputtering;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference, 1988., Conference Record of the Twentieth IEEE
Conference_Location
Las Vegas, NV, USA
Type
conf
DOI
10.1109/PVSC.1988.105713
Filename
105713
Link To Document