DocumentCode :
2504040
Title :
CPM measurements on a-Si:H based pin cells-a critical investigation
Author :
Geyer, R. ; Gorn, M. ; Kniffler, N. ; Lechner, P. ; Rübel, H. ; Scheppat, B.
Author_Institution :
MBB Energy & Process Technol., Munich, West Germany
fYear :
1988
fDate :
1988
Firstpage :
340
Abstract :
The subband gap optical absorption spectra of amorphous hydrogenated silicon p-i-n solar cells were investigated by photocurrent spectroscopy in the CPM (constant photocurrent method) mode. A comparative study was made of thin (standard) and thick p-i-n junctions as well as junctions with slightly n- and p-doped active layers. Characteristic dependencies on the applied bias voltages (forward and reverse bias and short-circuit case) were observed. A critical discussion of these results in comparison to standard measurements (I-V curves under illumination, spectral response) is given. It is found that Urbach energies (slope of the exponential tail) are not voltage bias dependent and show, in the cases observed, the expected enhancement in p- nu -n and p- pi -n diodes with respect to p-i-n diodes.
Keywords :
amorphous semiconductors; elemental semiconductors; hydrogen; photoconductivity; silicon; solar cells; I-V characteristics; Si:H solar cells; Urbach energies; amorphous semiconductors; applied bias voltages; constant photocurrent method; p-i-n junctions; subband gap optical absorption spectra; Absorption; Amorphous materials; Measurement standards; P-i-n diodes; PIN photodiodes; Photoconductivity; Photovoltaic cells; Silicon; Spectroscopy; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference, 1988., Conference Record of the Twentieth IEEE
Conference_Location :
Las Vegas, NV, USA
Type :
conf
DOI :
10.1109/PVSC.1988.105718
Filename :
105718
Link To Document :
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