DocumentCode :
2504047
Title :
New Ge-Me and Si-Me thin film compositions for high-temperature thermal converter construction
Author :
Beensh-Marchwicka, Grama ; Prociów, Eugeniusz ; Osadnik, Stanislaw
Author_Institution :
Fac. of Microsystem Electron. & Photonics, Wroclaw Univ. of Technol., Poland
fYear :
2003
fDate :
8-11 May 2003
Firstpage :
22
Lastpage :
25
Abstract :
The applicability of some thin films based on Ge-Me and Si-Me compositions in the thermal converter construction for high-temperature range has been investigated. All films were deposited by d.c. pulse magnetron sputtering. Testing converters contained the integrated thermopile with linear symmetry based on p-type Ge(Sb,V) and TiSi2 material combination and the heater built up using MeSi2 (Me: Mo, V, W, Ta, Ti) compositions with TCR varying from 0 to -1500 ppm/K. This choice permits to control the uniformity of distribution of temperature field. Various material combinations have been evaluated with the respect to the performance characteristics of thermal converters.
Keywords :
Seebeck effect; metallic thin films; semiconductor thin films; sputter deposition; thermoelectric conversion; thermopiles; titanium compounds; Ge-Me compositions; Si-Me compositions; TiSi2; dc pulse magnetron sputtering; high-temperature thermal converter construction; material combinations; temperature field distribution; thin film compositions; Composite materials; Gold; Semiconductor films; Semiconductor materials; Sputtering; Substrates; Temperature; Thermal resistance; Thermoelectricity; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronics Technology: Integrated Management of Electronic Materials Production, 2003. 26th International Spring Seminar on
Print_ISBN :
0-7803-8002-9
Type :
conf
DOI :
10.1109/ISSE.2003.1260476
Filename :
1260476
Link To Document :
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