Title :
International Electron Devices Meeting 1989. Technical Digest (Cat. No.89CH2637-7)
Abstract :
Presents the front cover of the conference proceedings.
Keywords :
VLSI; electric sensing devices; field effect transistors; integrated circuit technology; integrated memory circuits; semiconductor device models; semiconductor technology; BiCMOS device technology; MOS; SOI; ULSI; advanced bipolar devices; device modeling; dynamic memories; fast wave devices; gate dielectrics; heterostructure FETs; high-speed transistors; interconnect technology; linear beam devices; micromachining; nonvolatile memory; process technologies; sensors; simulation;
Conference_Titel :
Electron Devices Meeting, 1989. IEDM '89. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-0817-4
DOI :
10.1109/IEDM.1989.74205
