DocumentCode
2504195
Title
International Electron Devices Meeting 1989. Technical Digest (Cat. No.89CH2637-7)
fYear
1989
fDate
3-6 Dec. 1989
Abstract
Presents the front cover of the conference proceedings.
Keywords
VLSI; electric sensing devices; field effect transistors; integrated circuit technology; integrated memory circuits; semiconductor device models; semiconductor technology; BiCMOS device technology; MOS; SOI; ULSI; advanced bipolar devices; device modeling; dynamic memories; fast wave devices; gate dielectrics; heterostructure FETs; high-speed transistors; interconnect technology; linear beam devices; micromachining; nonvolatile memory; process technologies; sensors; simulation;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1989. IEDM '89. Technical Digest., International
Conference_Location
Washington, DC, USA
ISSN
0163-1918
Print_ISBN
0-7803-0817-4
Type
conf
DOI
10.1109/IEDM.1989.74205
Filename
74205
Link To Document