Title :
Fabrication of monolithic a-Si:H-CuInSe2/CdS tandem solar cells
Author :
McCandless, B.E. ; Birkmire, R.W. ; Buchanan, W.A. ; Phillips, J.E. ; Rocheleau, R.E.
Author_Institution :
Inst. of Energy Conversion, Delaware Univ., Newark, DE, USA
Abstract :
Monolithic two-terminal tandem solar cells using n-i-p a-Si CuInSe2/CdS solar cells have been prepared and characterized. A middle terminal permits diagnostic analysis of the component cells. The best two-terminal devices to date have open-circuit voltages above 1.0 V and efficiencies near 6%. The CuInSe2 cell contributes up to 0.3 V to the open-circuit voltage. Short-circuit current in these tandem devices is limited by the a-Si:H cell, which has not been optimized for operation in the n-i-p mode.
Keywords :
II-VI semiconductors; amorphous semiconductors; cadmium compounds; copper compounds; elemental semiconductors; hydrogen; semiconductor device manufacture; silicon; solar cells; ternary semiconductors; Si:H-CuInSe2-CdS solar cells; diagnostic analysis; efficiencies; open-circuit voltages; semiconductor device manufacture; tandem solar cells; Amorphous materials; Fabrication; Photonic band gap; Photovoltaic cells; Surface morphology; Temperature; Thin film circuits; Thin film devices; Voltage; Zinc oxide;
Conference_Titel :
Photovoltaic Specialists Conference, 1988., Conference Record of the Twentieth IEEE
Conference_Location :
Las Vegas, NV, USA
DOI :
10.1109/PVSC.1988.105726
