Title :
Metal diffusion and surface pattern formation on GaAs and As2S3 semiconductors
Author :
Iván, István ; Szabó, István ; Mojzes, Imre ; Kökényesi, Sándor ; Nemcsics, Ákos ; Suszter, Miklós ; Misák, Sándor
Author_Institution :
Dept. of Exp. Phys., Debrecen Univ., Hungary
Abstract :
The possible changes of composition, phase transformations at the surface were investigated in GaAs samples, covered with 50 nm thick Au layer and annealed at different temperatures. Diffusion processes at metal-semiconductor interface determine the surface pattern formation, which has fractal structure. Comparison was made with interdiffusion processes in Au-amorphous As2S3 and Bi-As2S3 structures, which were found as useful for micro and macroscopic surface relief formation, optical recording due to the additional photo-stimulated diffusion.
Keywords :
III-V semiconductors; annealing; arsenic compounds; bismuth; chalcogenide glasses; chemical interdiffusion; gallium arsenide; gold; semiconductor-metal boundaries; surface diffusion; surface phase transformations; 50 nm; As2S3; Au; Bi-As2S3; GaAs; amorphous structures; diffusion process; fractal structure; interdiffusion process; macroscopic surface relief formation; metal diffusion; metal-semiconductor interface; microscopic surface relief formation; optical recording; photo-stimulated diffusion; surface pattern formation; surface phase transformations; Annealing; Crystallization; Gallium arsenide; Gold; Indium phosphide; Materials science and technology; Pattern formation; Physics; Scanning electron microscopy; Temperature;
Conference_Titel :
Electronics Technology: Integrated Management of Electronic Materials Production, 2003. 26th International Spring Seminar on
Print_ISBN :
0-7803-8002-9
DOI :
10.1109/ISSE.2003.1260486
