Title :
Low power silicon RF ICs
Author :
Knapp, Herbert ; Böck, Josef ; Wurzer, Martin ; Aufinger, Klaus
Author_Institution :
Corp. Res., Infineon Technol. AG, Munich, Germany
Abstract :
We present low-power integrated circuits for RF and microwave applications manufactured in low-cost silicon bipolar technology. These circuits are a dual-modulus prescaler with a maximum operating frequency of more than 6 GHz and a power consumption of only 7.4 mW and a static frequency divider with a divide ratio of eight which operates up to 18 GHz with a power consumption of 40 mW
Keywords :
MMIC; bipolar integrated circuits; elemental semiconductors; frequency dividers; prescalers; silicon; 18 GHz; 40 mW; 6 GHz; 7.4 mW; RF applications; SHF; Si; divide ratio; dual-modulus prescaler; elemental semiconductor; low power silicon RF IC; low-cost silicon bipolar technology; low-power integrated circuits; maximum operating frequency; microwave applications; power consumption; static frequency divider; Application specific integrated circuits; Bipolar integrated circuits; Energy consumption; Frequency conversion; Integrated circuit manufacture; Integrated circuit technology; Microwave integrated circuits; Radio frequency; Radiofrequency integrated circuits; Silicon;
Conference_Titel :
EUROCOMM 2000. Information Systems for Enhanced Public Safety and Security. IEEE/AFCEA
Conference_Location :
Munich
Print_ISBN :
0-7803-6323-X
DOI :
10.1109/EURCOM.2000.874843
