Low power silicon RF ICs

Author

Knapp, Herbert ; Böck, Josef ; Wurzer, Martin ; Aufinger, Klaus

Author_Institution

Corp. Res., Infineon Technol. AG, Munich, Germany

fYear

2000

fDate

2000

Firstpage

404

Lastpage

407

Abstract

We present low-power integrated circuits for RF and microwave applications manufactured in low-cost silicon bipolar technology. These circuits are a dual-modulus prescaler with a maximum operating frequency of more than 6 GHz and a power consumption of only 7.4 mW and a static frequency divider with a divide ratio of eight which operates up to 18 GHz with a power consumption of 40 mW

Keywords

MMIC; bipolar integrated circuits; elemental semiconductors; frequency dividers; prescalers; silicon; 18 GHz; 40 mW; 6 GHz; 7.4 mW; RF applications; SHF; Si; divide ratio; dual-modulus prescaler; elemental semiconductor; low power silicon RF IC; low-cost silicon bipolar technology; low-power integrated circuits; maximum operating frequency; microwave applications; power consumption; static frequency divider; Application specific integrated circuits; Bipolar integrated circuits; Energy consumption; Frequency conversion; Integrated circuit manufacture; Integrated circuit technology; Microwave integrated circuits; Radio frequency; Radiofrequency integrated circuits; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

EUROCOMM 2000. Information Systems for Enhanced Public Safety and Security. IEEE/AFCEA

Conference_Location

Munich

Print_ISBN

0-7803-6323-X

Type

conf

DOI

10.1109/EURCOM.2000.874843

Filename

874843