Title :
Stability problems in point contact solar cells
Author :
Gruenbaum, P.E. ; Sinton, R.A. ; Swanson, R.M.
Author_Institution :
Stanford Electron. Lab., CA, USA
Abstract :
Single-crystal silicon point-contact solar cells show a degradation in their efficiency after being exposed to concentrated sunlight. Two mechanisms appear to be responsible: an increase in surface recombination velocity caused by ultraviolet light, possibly due to electron injection from the silicon into the oxide, and a gradual lowering of the effective carrier lifetime that occurs when the cell is under high-level injection for an extended period of time. Point-contact solar cells whose front-side passivation has a phosphorus as well as a thermal oxide diffusion are dramatically more resistant to ultraviolet radiation damage. Modeling results indicate that it is possible to make a point-contact solar cell that is 26.8% efficient after massive ultraviolet exposure.
Keywords :
carrier lifetime; electron-hole recombination; elemental semiconductors; passivation; radiation effects; silicon; solar cells; 26.8 percent; UV radiation damage; carrier lifetime; efficiency; electron injection; front-side passivation; semiconductors; single crystal Si point contact solar cells; stability; surface recombination velocity; ultraviolet light; Charge carrier lifetime; Current density; Degradation; Electrons; Laboratories; Passivation; Photovoltaic cells; Silicon; Spontaneous emission; Stability; Temperature measurement; Thermal resistance;
Conference_Titel :
Photovoltaic Specialists Conference, 1988., Conference Record of the Twentieth IEEE
Conference_Location :
Las Vegas, NV, USA
DOI :
10.1109/PVSC.1988.105736