Title :
23.9% monolithic multijunction solar cell
Author :
Virshup, G.F. ; Chung, B.-C. ; Werthen, J.G.
Author_Institution :
Varian Res. Center, Palo Alto, CA, USA
Abstract :
A monolithically grown two-junction solar cell has been fabricated which produces 23.9% efficiency under AM1.5 global conditions and 22.3% under AM0 conditions. These are the highest one-sun efficiencies reported to date for both AM0 and AM1.5. The Al.35Ga.65As (1.93 eV) top cell and the GaAs (1.42 eV) bottom cell were grown by metal-organic chemical vapor deposition on GaAs substrates. Cell design and processing are described, and results of cell testing are presented.
Keywords :
CVD coatings; III-V semiconductors; aluminium compounds; gallium arsenide; solar cells; testing; 1.42 eV; 1.93 eV; 22.3 percent; 23.9 percent; AM0 conditions; AM1.5 global conditions; GaAs-AlGaAs solar cells; metal-organic chemical vapor deposition; monolithic multijunction solar cells; semiconductor; Alloying; Chemical vapor deposition; Contact resistance; Etching; Gallium arsenide; Gold; MOCVD; Metallization; Ohmic contacts; Photovoltaic cells; Process design; Testing;
Conference_Titel :
Photovoltaic Specialists Conference, 1988., Conference Record of the Twentieth IEEE
Conference_Location :
Las Vegas, NV, USA
DOI :
10.1109/PVSC.1988.105740
