DocumentCode :
2504545
Title :
28% efficient GaAs concentrator solar cells
Author :
MacMillan, H.F. ; Hamaker, H.C. ; Kaminar, N.R. ; Kuryla, M.S. ; Ristow, M. Ladle ; Liu, D.D. ; Virshup, G.F. ; Gee, J.M.
Author_Institution :
Varian Res. Center, Palo Alto, CA, USA
fYear :
1988
fDate :
1988
Firstpage :
462
Abstract :
AlGaAs/GaAs heteroface solar concentrator cells which exhibit efficiencies in excess of 27% at high solar concentrations (>400 suns, AM1.5D, 100 mW/cm2) have been fabricated with both n/p and p/n configurations. The best n/p cell achieved an efficiency of 28.1% around 400 suns, and the best p/n cell achieved an efficiency of 27.5% around 1000 suns. The high performance of these GaAs concentrator cells compared to earlier high-efficiency cells was due to improved control of the metal-organic chemical vapor deposition growth conditions and improved cell fabrication procedures (gridline definition and edge passivation). The design parameters of the solar cell structures and optimized grid pattern were determined with a realistic computer modeling program. An evaluation of the device characteristics and a discussion of future GaAs concentrator cell development are presented.
Keywords :
III-V semiconductors; aluminium compounds; engineering computing; gallium arsenide; solar cells; solar energy concentrators; 27.5 percent; 28.1 percent; AlGaAs-GaAs heteroface solar concentrator cells; cell fabrication procedures; computer modeling program; edge passivation; gridline definition; metal-organic chemical vapor deposition growth; semiconductor; Chemical vapor deposition; Coatings; Costs; Design optimization; Fabrication; Gallium arsenide; Grid computing; MOCVD; Metallization; Passivation; Photovoltaic cells; Silicon; Sun; Surface resistance;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference, 1988., Conference Record of the Twentieth IEEE
Conference_Location :
Las Vegas, NV, USA
Type :
conf
DOI :
10.1109/PVSC.1988.105745
Filename :
105745
Link To Document :
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