DocumentCode
2504562
Title
High efficiency GaAs solar cells fabricated on Si substrates
Author
Okamoto, Hiroshi ; Kadota, Yoshiaki ; Watanabe, Yoshio ; Fukuda, Yukio ; Hara, Takahiko Oh ; Ohmachi, Yoshiro
Author_Institution
NTT Appl. Electron. Lab., Tokyo, Japan
fYear
1988
fDate
1988
Firstpage
475
Abstract
A total area conversion efficiency of 18.3% (one sun, AM0) was achieved with 10*10 mm2 GaAs-on-Si cells by dislocation reduction in the cell active layers using in situ thermal cycles, a strained-layer superlattice, and a multilayered AlGaAs buffer. The efficiency is comparable to that of conventional homoepitaxial liquid-phase epitaxy cells. The radiation resistance of the GaAs-on-Si cells was confirmed by 1 MeV electron irradiation tests.
Keywords
III-V semiconductors; elemental semiconductors; gallium arsenide; radiation effects; semiconductor junctions; silicon; solar cells; 1 MeV; 18.3 percent; GaAs-Si solar cells; conversion efficiency; dislocation reduction; electron irradiation tests; radiation resistance; semiconductor; strained-layer superlattice; thermal cycles; Buffer layers; Electrons; Epitaxial growth; Etching; Gallium arsenide; Hydrogen; Indium gallium arsenide; Inductors; Laser sintering; MOCVD; Photovoltaic cells; Substrates; Sun; Superlattices; Surface cracks; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference, 1988., Conference Record of the Twentieth IEEE
Conference_Location
Las Vegas, NV, USA
Type
conf
DOI
10.1109/PVSC.1988.105747
Filename
105747
Link To Document