DocumentCode :
2504761
Title :
Multilevel metallization for large area point-contact solar cells
Author :
Verlinden, P. ; Swanson, R.M. ; Sinton, R.A. ; Kane, D.E.
Author_Institution :
Microelectron. Lab., Univ. Catholique de Louvain, Belgium
fYear :
1988
fDate :
1988
Firstpage :
532
Abstract :
An analysis of the series resistances of different metallization schemes for large-area backside-contact (BC) solar cells is presented. The need for developing a multilevel metallization technology for such cells is demonstrated. The authors propose a new design for the metallization of BC cells that present a series resistance independent of the cell size. The particular features required for such a multilevel interconnection are studied, and a process using anodic oxidation of aluminum is presented. BC silicon solar cells of 0.64 cm2 have been processed in this technology, resulting in 26.2% efficiencies at 10 W/cm2 (100 suns AM1.5, 25.5 degrees C). Subsequent runs with a simplified process and a new cell design have given 27.3% efficiency cells. The cells have been soldered on alumina mounts. Results of thermal cycling are given.
Keywords :
elemental semiconductors; metallisation; silicon; solar cells; 27.3 percent; BC cells; Si solar cells; backside-contact; large area point-contact solar cells; multilevel metallization; semiconductor; thermal cycling; Aluminum; Artificial intelligence; Conductivity; Differential equations; Electrodes; Fingers; Metallization; Oxidation; Photovoltaic cells; Silicon; Sun;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference, 1988., Conference Record of the Twentieth IEEE
Conference_Location :
Las Vegas, NV, USA
Type :
conf
DOI :
10.1109/PVSC.1988.105759
Filename :
105759
Link To Document :
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