DocumentCode :
2504793
Title :
Front and back surface fields for point-contact solar cells
Author :
King, R.R. ; Sinton, R.A. ; Swanson, R.M.
Author_Institution :
Stanford Univ., CA, USA
fYear :
1988
fDate :
1988
Firstpage :
538
Abstract :
The authors discuss the use of planar dopant diffusions to reduce surface recombination in point-contact solar cells. These noncurrent collecting diffusions can boost the efficiency of point-contact cells significantly for incident intensities below about 5 suns (0.500 W/cm2). At these low power levels, the surface recombination is the dominant recombination mechanism. Measured values of the emitter saturation current density, Jo, of phosphorus diffusions at the oxidized silicon surface are presented for a range of surface concentrations and furnace conditions on untexturized
Keywords :
electron-hole recombination; elemental semiconductors; phosphorus; silicon; solar cells; 0.706 V; 22.3 percent; 25 degC; Si:P solar cells; emitter saturation current density; noncurrent collecting diffusions; open-circuit voltage; planar dopant diffusions; point-contact solar cells; semiconductor; sunward surface; surface recombination; Circuits; Conductivity; Current density; Current measurement; Density measurement; Furnaces; Photovoltaic cells; Silicon; Sun; Surface resistance; Surface texture; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference, 1988., Conference Record of the Twentieth IEEE
Conference_Location :
Las Vegas, NV, USA
Type :
conf
DOI :
10.1109/PVSC.1988.105760
Filename :
105760
Link To Document :
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