DocumentCode
2504870
Title
Fundamental parameter measurements of high efficiency single crystal silicon concentrator cells
Author
Shea, Stephen P. ; Wohlgemuth, John H. ; Silver, Jerald R.
Author_Institution
Solarex Corp., Frederick, MD, USA
fYear
1988
fDate
1988
Firstpage
566
Abstract
In order to optimize production processes used to make solar cells, it is helpful to have experimental access to the effects of the process by measuring parameters more fundamental than those derived from the current-voltage characteristics of finished devices. The authors have developed a set of nine small cells which can be made on a single substrate using the same process as is used for standard cells. Variable metal coverage on this set allows the extraction of fundamental parameters, such as surface recombination velocities, from measurements of sample reflectance, quantum efficiency, and current-voltage characteristics. The method provides an excellent means for feeding back information to engineers working to design and optimize both high-efficiency and large-scale production processes.
Keywords
electron-hole recombination; elemental semiconductors; silicon; solar cells; current-voltage characteristics; high efficiency; quantum efficiency; reflectance; semiconductor; single crystal Si solar cells; surface recombination velocities; variable metal coverage; Current measurement; Current-voltage characteristics; Data mining; Photovoltaic cells; Production; Radiative recombination; Reflectivity; Silicon; Standards development; Velocity measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference, 1988., Conference Record of the Twentieth IEEE
Conference_Location
Las Vegas, NV, USA
Type
conf
DOI
10.1109/PVSC.1988.105765
Filename
105765
Link To Document