• DocumentCode
    2504870
  • Title

    Fundamental parameter measurements of high efficiency single crystal silicon concentrator cells

  • Author

    Shea, Stephen P. ; Wohlgemuth, John H. ; Silver, Jerald R.

  • Author_Institution
    Solarex Corp., Frederick, MD, USA
  • fYear
    1988
  • fDate
    1988
  • Firstpage
    566
  • Abstract
    In order to optimize production processes used to make solar cells, it is helpful to have experimental access to the effects of the process by measuring parameters more fundamental than those derived from the current-voltage characteristics of finished devices. The authors have developed a set of nine small cells which can be made on a single substrate using the same process as is used for standard cells. Variable metal coverage on this set allows the extraction of fundamental parameters, such as surface recombination velocities, from measurements of sample reflectance, quantum efficiency, and current-voltage characteristics. The method provides an excellent means for feeding back information to engineers working to design and optimize both high-efficiency and large-scale production processes.
  • Keywords
    electron-hole recombination; elemental semiconductors; silicon; solar cells; current-voltage characteristics; high efficiency; quantum efficiency; reflectance; semiconductor; single crystal Si solar cells; surface recombination velocities; variable metal coverage; Current measurement; Current-voltage characteristics; Data mining; Photovoltaic cells; Production; Radiative recombination; Reflectivity; Silicon; Standards development; Velocity measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference, 1988., Conference Record of the Twentieth IEEE
  • Conference_Location
    Las Vegas, NV, USA
  • Type

    conf

  • DOI
    10.1109/PVSC.1988.105765
  • Filename
    105765