Title :
Improved prediction and analysis of cell performance at elevated temperatures
Author :
Garlick, G.F.J. ; Smith, B.S.
Author_Institution :
Spectrolab Inc., Sylmar, CA, USA
Abstract :
Improved modeling and analysis have been applied to data on Si solar cells made for the Magellan satellite (Venus orbits) at temperatures from -50 to 100 degrees C. Derived saturation currents for the cells have been used to calculate base minority carrier lifetimes. These rise with temperature, showing some saturation near 100 degrees C. Data are quantitatively explained by an energy band model with divacancy levels at 0.25 eV and impurity levels at 0.6 eV above the valance band. Close fits to experimental results are found for concentrations of 6*1012/cm3 and 1.5-2*1011/cm3 for the 0.25 and 0.6 eV levels, respectively. At 100 degrees C the saturation is controlled by the latter, while divacancies affect the lifetimes at lower temperatures. It is concluded that this analysis of quite usual test data for cells, coupled with temperature variation, provides a powerful insight into basic parameters which determine the cell operational performance.
Keywords :
carrier lifetime; elemental semiconductors; energy gap; impurity electron states; minority carriers; silicon; solar cells; space vehicle power plants; -50 to 100 degC; Magellan satellite; Si solar cells; Venus orbits; base minority carrier lifetimes; divacancy levels; energy band model; impurity levels; performance analysis; saturation currents; semiconductor; valance band; Charge carrier lifetime; Impurities; Orbital calculations; Orbits; Performance analysis; Photovoltaic cells; Satellites; Temperature control; Testing; Venus;
Conference_Titel :
Photovoltaic Specialists Conference, 1988., Conference Record of the Twentieth IEEE
Conference_Location :
Las Vegas, NV, USA
DOI :
10.1109/PVSC.1988.105769