BaxSr1-xTiO3 thin films made by TurbodiscTM PE-MOCVD techniques

TurboDisc^(TM) and Plasma Enhanced MOCVD techniques have been used to deposit Ba_xSr_1-xTiO₃ (BST) thin films. The precursors for making the BST thin films were derived from Ba(thd)2, Sr(thd)2 and titanium isopropoxide (TIP). The BST thin films were deposited onto Pt/Ti/Si0₂/Si wafers, Si (100) wafers and single-crystal sapphire substrates to measure their phase formation, thickness uniformity and electrical properties. Typically, 200 nm thick Ba_0.5Sr_0.5TiO₃ thin films on Pt electrodes have a dielectric constant of approximately 600, and a leakage current of less than 2×10^-7 A/cm² at 100 kV/cm and room temperature. These characteristics suggest that the TurboDisc^(TM), PE-MOCVD technique could be used in the creation of reliable, high density memory devices. In addition, the relationship between composition, microstructure and electrical properties of BST thin films was also investigated