Title :
Influence of oxygen on the performance of silicon solar cells
Author_Institution :
Solar Energy Res. Inst., Golden, CO, USA
Abstract :
The effects of dissolved and precipitated oxygen in silicon on the solar cell performance are identified. It is shown that oxygen concentrations up to 5*1017 cm-3 can be beneficial for improving cell performance. The presence of precipitated oxygen, which can often accompany dissolved oxygen concentrations beyond 5*1017 cm-3, strongly influences the cell performance. The dominant mechanisms influencing the cell parameters are discussed. The implications of these results are discussed in the light of material requirements for high-efficiency silicon solar cells.
Keywords :
elemental semiconductors; oxygen; silicon; solar cells; O2 concentration; Si solar cells; Si:O; dissolved O2; high-efficiency; performance; precipitate O2; semiconductor; Boron; Etching; Impurities; Infrared spectra; Lead; Oxygen; Photovoltaic cells; Pressure control; Silicon; Stacking;
Conference_Titel :
Photovoltaic Specialists Conference, 1988., Conference Record of the Twentieth IEEE
Conference_Location :
Las Vegas, NV, USA
DOI :
10.1109/PVSC.1988.105770